TFT substrate glass
2018-08-21 18:01:08
| Application Number: | 200710054548.4 | Application date: | 2007.06.11 |
| name: | TFT substrate glass | ||
| Public (announcement) number: | CN101066836 | Public (announcement) day: | 2007.11.07 |
| Main classification number: | C03C3/095(2006.01)I | The original application number of the division: | |
| Classification number: | C03C3/095(2006.01)I | ||
| Award day: | priority: | ||
| Application (patent) person: | China Luoyang Float Glass Group Co., Ltd. | ||
| address: | No. 9 Tanggong Middle Road, Xigong District, Luoyang City, Henan Province, China | ||
| Invention (design) person: | JIANG Hong;YAN Xiao;WANG Guirong;ZHAO Huifeng;SHEN Jie;GUO Xiaoli;LI Junge;XIAO Jing | International application: | |
| International announcement: | Enter country date: | ||
| Patent agency: | Zhengzhou Zhongmin Patent Agency Co., Ltd. | agent: | Guo Zhongmin |
The TFT substrate glass disclosed in the present invention is composed of the following components, which are composed of the following components: 55 to 62% of silicon dioxide (SiO2) and 13 to 20% of aluminum oxide (Al2O3). ), 8 to 12% of boron trioxide (B2O3), 0.1 to 4% of zirconium dioxide (ZrO2), 3.5 to 8% of calcium oxide (CaO), 0.1 to 5% of magnesium oxide (MgO), 2 6% of strontium oxide (SrO), 1 to 4.0% of barium oxide (BaO), 0.1 to 1% of zinc oxide (ZnO), 0.1 to 2% of cerium oxide (GeO2), and 0 to 0.8% of five Vanadium oxide (V2O5) and 0.1 to 2% antimony trioxide (La2O3) are additionally added with 0.1-0.3% antimony trioxide (Sb2O3) or 0.1-0.3% antimony oxide (CeO2). The invention relates to an alkali-free boron, aluminum and silicate glass. The physicochemical properties of the glass are adjusted by adding Ca, Mg, Zr, Sr, Ba, especially adding Ge, V and La, and additionally by adding Sb2O3. Or CeO2 gives the glass a good clarification and homogenization. Make it suitable for TFT-LCD requirements. The glass produced can be used as a substrate for a thin film transistor liquid crystal display (TFT-LCD) to meet any performance requirements in the TFT-LCD process. Its thermal expansion coefficient is less than 40×10-7/°C at 25°C～400°C, the strain point is above 650°C, the transformation point is above 710°C, the Ritter softening point is greater than 900°C, the density is less than 2.55g/mm3, and the visible light is transparent. The rate of passing is not less than 90%.
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